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2022

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Principle of Plasma Generation in Diamond Equipment

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The fundamental principle underlying microwave plasma generation is as follows: a microwave source emits microwave energy, which is transmitted via a waveguide and undergoes an antenna mode conversion before entering the resonant cavity. Inside the cavity, a microwave alternating electric field of sufficient intensity is established. Under the excitation of this alternating electric field, the reactive gas maintained at low pressure is ionized, thereby forming a plasma.

Principle of Plasma Generation in Diamond Equipment

 Diamond deposition equipment

The fundamental principle underlying microwave‑plasma generation is as follows: a microwave source emits microwave energy, which is transmitted via a waveguide and converted into an antenna mode before entering the resonant cavity. Inside the cavity, a microwave‑induced alternating electric field of sufficient intensity is established. Under the excitation of this alternating field, the reactive gas maintained at low pressure undergoes dielectric breakdown, thereby forming a plasma. Throughout this process, the energy originates from microwaves of varying energies produced by the microwave source at different power levels. The magnitude of the microwave energy directly influences both the strength and spatial extent of the generated alternating electric field. Electrons, accelerated by the electric field, gain kinetic energy and subsequently collide with gas molecules, imparting energy to them and enabling efficient dissociation and excitation. Consequently, the microwave power level plays a critical role in determining the intensity of the resulting microwave‑induced alternating electric field and the degree of ionization and chemical reactions occurring within the plasma.


Under normal conditions, the more oblate the plasma sphere, the more uniform the distribution of the plasma temperature field, making it more favorable for the high‑quality growth of single‑crystal diamond. Meanwhile, the size of the plasma determines the effective area available for single‑crystal diamond growth: a larger plasma sphere enables the production of a greater number of single crystals in a single batch. For a given type of resonant cavity, the actual size of the plasma sphere is primarily governed by the microwave power. Increasing the microwave power raises the energy coupled into the cavity, resulting in a stronger electric field with a broader region of high field strength. Consequently, the excited plasma sphere becomes larger, the spatial distribution of high‑energy electrons expands, and the substrate temperature becomes more uniformly distributed, all of which are conducive to the deposition of multiple wafers simultaneously.


Diamond equipment

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