17
2022
-
10
Diamond film growth process
Author:
Diamond possesses excellent physicochemical properties; however, its natural reserves are limited and extraction is challenging. Consequently, numerous methods for synthesizing diamond have been developed, including the high‑temperature high‑pressure (HTHP) method, hot‑filament chemical vapor deposition (HFCVD), and microwave plasma chemical vapor deposition (MPCVD). Among these, microwave plasma CVD stands out because it avoids the introduction of impurities, enabling the production of high‑quality, large‑area diamond.
Diamond film growth process
Diamonds possess outstanding physicochemical properties; however, their natural reserves are limited and extraction is challenging. Consequently, numerous methods for synthesizing diamond have been developed, including the high‑temperature high‑pressure (HTHP) method, hot‑filament chemical vapor deposition (HFCVD), and microwave plasma chemical vapor deposition (MPCVD). Among these, microwave plasma CVD stands out because it avoids the introduction of impurities, enabling the production of high‑quality, large‑area diamond films.
The MPCVD method for growing diamond films generally involves the following steps: 1) Select a diamond seed crystal of appropriate size, free from obvious defects and of high quality, then perform preliminary treatment to obtain a smooth, thoroughly cleaned surface; 2) Place the diamond seed crystal on a molybdenum sample holder inside the reaction chamber of the microwave plasma chemical vapor deposition (MPCVD) system; 3) Evacuate the reaction chamber by using the gas‑inlet/outlet system to achieve a vacuum, and adjust the position of the molybdenum holder vertically using the substrate‑stage lifting mechanism of the MPCVD equipment; 4) Initiate diamond growth by introducing a mixed process gas into the reaction chamber via the gas‑supply system. Once the initial pressure is reached, activate the microwave source and gradually increase the microwave power. When the temperature of the diamond seed crystal attains the set value, maintain stable growth conditions to promote diamond deposition; 5) Remove the grown diamond from the MPCVD reaction chamber. After the diamond seed crystal has been grown for the prescribed duration, progressively reduce the flow rate of the process gases, lower the microwave power, and decrease the chamber pressure until the microwave power is reduced to 600 W. Then shut off the process gas supply and the microwave power, continue evacuating the chamber, and once the vacuum level reaches the lower limit indicated by the gauge, introduce air through the gas‑inlet/outlet system to break the vacuum. Finally, when the pressure inside the MPCVD reaction chamber returns to ambient levels, extract the finished diamond product.
Diamond film
Previous page
Previous page
Related News
From September 9 to 11, the 27th China International Optoelectronic Exposition (CIOE 2026) was grandly held.
From July 15 to 17, the 14th Western Global Semiconductor Expo (CWICE 2026) was held at the Chengdu Century City New International Convention and Exhibition Center. As a leading domestic player in MPCVD (Microwave Plasma Chemical Vapor Deposition) equipment and high-quality diamond materials, UPL (Youpulai) showcased its proprietary MPCVD systems and premium diamond substrates at the event.
From June 10 to 12, the 2026 Future Industry New Materials Expo (FINE 2026) was held at the Shanghai New International Expo Centre. At the event, UPL made a prominent appearance, presenting its MPCVD (Microwave Plasma Chemical Vapor Deposition) systems alongside comprehensive diamond material solutions for diverse application scenarios. The company engaged with industry peers and downstream customers to explore the innovative uses and future trajectory of diamond in the semiconductor sector.
On April 16–17, the 2026 (Second) Future Semiconductor Industry Innovation Conference was grandly held at Yinsan Lake in Suzhou.
On March 18–19, the 2026 Second Symposium on Fourth-Generation Semiconductor Technology was grandly held in Hangzhou. As a leading enterprise in China’s MPCVD equipment and diamond materials sectors, Uniplasma showcased its core products and technical solutions at the conference, engaging in in-depth exchanges with industry peers and jointly discussing the future of the sector.
On February 28, the unveiling ceremony of Henan Fengyouchuang Materials Technology Co., Ltd. (hereinafter referred to as Henan Fengyouchuang), a joint venture established by Shenzhen Uniplasma and Huanghe Xuanfeng, was solemnly held in Xuchang. Attending the ceremony were Yang Zengjun, Party Secretary and Chairman of the Xuchang Municipal Investment Group; Quan Feng, Chairman of Shenzhen Uniplasma; Chai Bohao, Deputy General Manager of Shenzhen Uniplasma; Du Ping, Deputy Director of the Henan Branch of the China Development Bank; Li Ge, Chairman of Huanghe Xuanfeng; Pang Wenlong, General Manager of Huanghe Xuanfeng, along with other leaders.
New Materials, New Future | Uniplasma showcases at the Carbontech 2025 Carbon Materials Exhibition
On December 11, the 9th International Carbon Materials Conference and Industry Exhibition, Carbontech 2025, concluded successfully at the Shanghai New International Expo Center. At the event, Uniplasma made a prominent appearance with its core technologies and products, bringing together industry peers to discuss new directions and a promising future for the diamond industry.
On November 16, the 27th China Hi-Tech Fair and the Asia Semiconductor and Integrated Circuit Industry Exhibition concluded successfully at the Shenzhen (Bao’an) International Convention and Exhibition Center. At the event, Uniplasma showcased its MPCVD equipment and diamond material products, offering a “core” solution to address the semiconductor industry’s “thermal management crisis” and injecting “core” momentum.
Follow us
Follow the public account
Tel：
Email：
在线客服添加返回顶部
右侧在线客服样式 1,2,3 3
图片alt标题设置： Shenzhen Uniplasma Technology Co., Ltd.
表单验证提示文本： Content cannot be empty!
循环体没有内容时： Sorry, no matching items were found.
CSS / JS 文件放置地