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2023
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The vertical lifting and lowering function of the diamond‑tool substrate stage.
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The working principle of microwave plasma chemical vapor deposition (MPCVD) is as follows: first, the resonant cavity is evacuated and kept hermetically sealed at all times. The microwaves generated by the microwave generator are coupled into the resonant cavity via a waveguide, and a reactive gas mixture of a carbon source and hydrogen is introduced. Under microwave excitation, a glow discharge is initiated within the resonant cavity, ionizing the reactant gases and generating various active species. These active species then undergo a series of chemical reactions on the seed crystal, leading to adsorption, desorption, migration, diffusion, and deposition on the seed crystal surface, ultimately resulting in diamond formation. Since this process relies on electromagnetic wave energy to activate the reaction gases, it falls under…
The vertical lifting and lowering function of the diamond‑tool substrate stage.
The microwave plasma chemical vapor deposition (MPCVD) process operates by first evacuating the resonant cavity and maintaining its airtight seal. Microwaves generated by a microwave generator are coupled into the resonant cavity via a waveguide, and a reactive gas mixture of a carbon source and hydrogen is introduced. Under microwave excitation, a glow discharge is sustained within the cavity, ionizing the reactant gases and generating various reactive species. These active species then undergo a series of chemical reactions on the seed crystal, leading to adsorption, desorption, migration, diffusion, and deposition at the crystal surface, ultimately yielding diamond. Because this method uses electromagnetic energy to energize the reaction gases, it involves electrodeless discharge, resulting in a highly pure plasma. Moreover, the microwave‑induced discharge is localized and does not spread, enabling the activation of diverse atomic species such as atomic hydrogen. The ions produced possess low kinetic energy, thereby avoiding etching of the already formed diamond.
During diamond growth, the plasma resides above the diamond film and maintains a specific gap. As the diamond film continues to grow, its thickness increases, causing the distance between the film’s surface and the plasma to decrease. Since the temperature required for diamond growth is supplied by the plasma—and this growth temperature is precisely controlled—increasing film thickness eventually causes the local ambient temperature to deviate from the optimal growth range, which is detrimental to diamond formation. The vertical positioning of the substrate holder effectively addresses this issue: after a certain growth period, the holder can be lowered by an appropriate distance, ensuring that the diamond film and the plasma always maintain the desired separation.
Diamond equipment
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