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2023
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04
Preparation Method of Diamond Coatings
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Currently, the preparation of diamond coatings predominantly relies on microwave plasma chemical vapor deposition. The reactive gas sources used for growing MPCVD single-crystal diamond coatings mainly include hydrogen (H2), methane (CH4), nitrogen (N2), and oxygen (O2). Under the excitation of the microwave field, these gases dissociate into atomic species such as H, O, and N, or into active functional groups like CH2, CH3, C2H2, and OH.
Preparation methods for diamond coatings
Currently, the preparation of diamond coatings predominantly relies on microwave plasma chemical vapor deposition. The primary reactant gases used in growing MPCVD single-crystal diamond coatings include hydrogen (H₂), methane (CH₄), nitrogen (N₂), and oxygen (O₂). Under the excitation of the microwave field, these gases dissociate into atomic species such as H, O, and N, or into reactive functional groups like CH₂, CH₃, C₂H₂, and OH. Among these, carbon‑containing active species (CH₂, CH₃, C₂H₂) form a gas–solid interfacial layer on the diamond surface, enabling the growth of diamond (sp³ hybridization) alongside amorphous carbon or graphite (sp² hybridization) under either a dynamic equilibrium model or a non‑equilibrium thermodynamic framework. Since hydrogen plasma etches amorphous carbon or graphite (sp²) much more rapidly than it etches diamond (sp³), the non‑diamond phases at the MPCVD diamond surface are swiftly removed, thereby facilitating diamond growth.
Specifically, it is divided into the following processes:
A→B process: Under the action of microwave plasma, the C–H bonds on the diamond surface cleave; the detached hydrogen atoms combine with hydrogen atoms in the plasma to form H₂, while the diamond surface develops carbon dangling bonds and excess electrons.
Process B→C: A methyl group (CH3) in the plasma forms a covalent bond with excess electrons on the diamond surface.
C→D Process: A hydrogen atom is removed from the methyl group on the diamond surface, exposing an electron.
D→E process: The carbon rings on the diamond surface open, generating an extra electron and a C=C bond.
E→F Process: The C=C bonds on the diamond surface are converted into C–C bonds, releasing excess electrons that subsequently form new C–C bonds with the surplus electrons on the diamond surface, thereby incorporating the carbon source into the diamond surface.
F→G process: Hydrogen atoms in the plasma combine with excess electrons on the diamond surface.
Subsequently, repeated cycles from A to G enable the growth of single-crystal diamond.
Diamond coating
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