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How to use diamond deposition equipment to obtain large‑size single‑crystal diamonds
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The fabrication of large‑size diamond has long been a persistent challenge for manufacturers worldwide. As a foundational material for semiconductors and high‑frequency power devices, overcoming this technical hurdle and achieving the industrialization of large‑size single‑crystal diamond would hold profound significance for China’s smart manufacturing initiatives and industrial upgrading. Compared with polycrystalline diamond, single‑crystal diamond is free from grain‑boundary limitations, endowing it with superior performance in optical and electrical applications. Crucially, realizing these advantages hinges on the production of large‑size, high‑quality single‑crystal diamond.
How to use diamond deposition equipment to obtain large‑size single‑crystal diamonds
The preparation of large‑size diamond has long been a challenging problem for manufacturers both domestically and internationally. As a foundational material for semiconductors and high‑frequency power devices, overcoming this technical hurdle and achieving the industrialization of large‑size single‑crystal diamond would be of great significance for China’s smart manufacturing initiatives and industrial upgrading. Compared with polycrystalline diamond, single‑crystal diamond is free from grain boundary limitations, giving it superior performance in optical and electrical applications. However, realizing these advantages hinges on the ability to produce large‑size, high‑quality single‑crystal diamond.
Currently, the main techniques for preparing large‑size diamonds and diamond wafers include mosaic stitching, homoepitaxial growth, heteroepitaxial growth, and three‑dimensional growth.
As one of the most viable approaches for synthesizing large‑size single‑crystal diamonds, mosaic‑bonding research dates back to 1995. This method involves tightly assembling diamond single‑crystal wafers into a large‑area substrate and then growing diamond on it within a CVD reactor. By leveraging lateral epitaxy between the individual wafers, the joints are seamlessly connected, enabling the fabrication of large‑area MPCVD‑grown homoepitaxial single‑crystal diamonds. The approach primarily focuses on controlling the quality and crystal orientation of the single‑crystal substrates, as well as refining the lateral epitaxy process. However, mosaic bonding imposes stringent requirements on substrate uniformity, often leading to residual stresses and defects at the joints. Moreover, the process is costly, necessitates an exfoliation step, and yields very low product rates.
Homogeneous epitaxy is one of the key technologies for fabricating diamond-based electronic devices, characterized by low defect density and capable of producing wafers up to 0.5 inches in size. However, during the homogeneous epitaxial growth of single-crystal diamond, detaching the grown diamond layer from the substrate poses a significant challenge. This is because the substrate itself is also a hard single-crystal diamond, making conventional cutting techniques unsuitable.
Heteroepitaxy is also an effective approach for growing large‑area single‑crystal diamond. This method employs high‑quality, inch‑scale silicon wafers as substrates and utilizes diamond deposition equipment to deposit high‑quality diamond films. By carefully controlling the growth process, the crystalline grains gradually coalesce, enabling the transformation from polycrystalline to single‑crystal diamond. In theory, this technique can produce single‑crystal diamond with sufficiently large areas to meet the industrialization demands of electronic device applications; however, its main drawback is a relatively high defect density.
Diamond deposition equipment
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