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Strong Partnership | Uniplasma and Huanghe Xuanfeng Jointly Establish a Joint Venture—Henan Fengyouchuang
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On September 17, Uniplasma and Huanghe Xuanfeng jointly established a joint venture—Henan Fengyouchuang Materials Technology Co., Ltd. (hereinafter referred to as Henan Fengyouchuang). This collaboration not only represents an efficient synergy between “cutting-edge technology” and an “industrial flagship,” but will also seamlessly close the entire industrial chain—from “equipment R&D” and “material growth” to “large-scale application”—marking a major leap from technological leadership to market leadership. Uniplasma Chairman Quan Feng, Huanghe Xuanfeng Chairman Li Ge, Vice Chairman and General Manager Pang Wenlong, and others attended the signing ceremony.
On September 17, Uniplasma and Huanghe Xuanfeng jointly established a joint venture—Henan Fengyouchuang Materials Technology Co., Ltd. (hereinafter referred to as Henan Fengyouchuang). This collaboration not only represents an efficient synergy between “cutting-edge technology” and an “industrial flagship,” but will also fully integrate the entire industrial chain into a closed-loop system, spanning from “equipment R&D” and “material growth” to “large-scale application,” thereby achieving a major leap from technological leadership to market leadership. Uniplasma Chairman Quan Feng, Huanghe Xuanfeng Chairman Li Ge, Vice Chairman and General Manager Pang Wenlong, and others attended the signing ceremony.
It is reported that Uniplasma will, as an investor, acquire a stake in Henan Fengyouchuang, a wholly owned subsidiary of Huanghe Xuanfeng, through a capital increase and share expansion. Following the capital increase and share expansion, Henan Fengyouchuang’s registered capital will be increased from the current RMB 10 million to RMB 20 million. Specifically, Huanghe Xuanfeng will subscribe for RMB 10.2 million in registered capital, holding a 51% stake, while Uniplasma will subscribe for RMB 9.8 million in registered capital, holding a 49% stake.
At the ceremony, Uniplasma Chairman Quan Feng stated that, through this equity investment, the company will officially transition from a mere equipment supplier to a deep participant in the industry chain and a stakeholder sharing in its benefits. This collaborative model enables the company to better align with the production needs of downstream customers, driving continuous optimization and innovation in equipment technology, thereby consolidating its technological leadership in fierce market competition and achieving a transformation and upgrade from an “equipment manufacturer” to a “provider of comprehensive solutions.”
As the principal entity in this collaboration, Huanghe Xuanfeng is a leading domestic player in the ultra‑hard materials and related products sector, boasting deep technical expertise and extensive industrialization experience in ultra‑high‑pressure synthesis equipment as well as diamond research, development, and production. Expanding into the third‑generation semiconductor business represents the strategic cornerstone of Huanghe Xuanfeng’s efforts to capitalize on the emerging wave of new materials and drive industrial upgrading. Its joint venture, Fengyouchuang, has been entrusted with this strategic mission and will serve as a key platform for the company’s future third‑generation semiconductor materials operations.
Uniplasma is one of the very few domestic high-tech enterprises capable of manufacturing 4- to 10-inch polycrystalline diamond wafer MPCVD (microwave plasma chemical vapor deposition) equipment, and it is also a leading player in China’s microwave plasma chemical vapor deposition (MPCVD) equipment and CVD diamond materials industries. The company’s robust equipment-manufacturing capabilities are undoubtedly a prerequisite and a solid foundation for producing high-quality third-generation semiconductor diamond materials.
Looking ahead, the joint venture Fengyouchuang will focus on the production and sales of CVD diamond materials, striving to establish China as a “technological hub” and a “production base” for semiconductor-grade diamond. It aims to break the monopoly held by foreign manufacturers in the high-end semiconductor substrate materials sector and make a pivotal contribution to the nation’s efforts to achieve self-reliance and controllability in critical strategic materials.
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