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2022
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Why is MPCVD equipment considered an ideal system for diamond deposition?
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The principle behind diamond deposition in MPCVD equipment is that a microwave generator produces microwaves, which are transmitted via a waveguide into the vacuum chamber. There, reaction gases such as methane and hydrogen are ionized, forming a plasma that subsequently deposits on the substrate as diamond. Under microwave excitation, the reaction gases transition into a plasma state. This occurs because microwaves constitute a high-frequency electromagnetic field; electrons, subjected to this field, collide with other gas-phase species, significantly enhancing gas ionization and generating a high‑density plasma. The plasma serves two primary functions: first, it raises the substrate temperature, bringing the diamond substrate to an optimal level for epitaxial growth; second, it supplies reactive species that participate in the chemical reactions.
Why is MPCVD equipment considered an ideal system for diamond deposition?
Diamond is not only a gemstone of significant collectible value, but also possesses exceptional properties—such as high strength, extreme hardness, a low coefficient of thermal expansion, excellent thermal conductivity, remarkable chemical stability, superior optical transparency, and semiconductor characteristics—making it highly valuable across a wide range of applications. Currently, methods for synthesizing diamond include the high‑temperature high‑pressure (HPHT) process, hot‑filament chemical vapor deposition (HFCVD), and microwave plasma chemical vapor deposition (MPCVD).
The principle underlying diamond deposition in MPCVD equipment is that a microwave generator produces microwaves, which are guided into the vacuum chamber via a waveguide. This ionizes reactive gases such as methane and hydrogen, leading to their deposition as diamond on the substrate. Under microwave excitation, the reactive gases transition into a plasma state: the high‑frequency electromagnetic field causes electrons to collide with other gas molecules, significantly enhancing ionization and generating a high‑density plasma. The plasma serves two primary functions: first, it raises the substrate temperature to an optimal level for epitaxial growth; second, it supplies reactive species—carbon precursors and active hydrogen atoms—that participate in the reaction. Carbon precursors promote the epitaxial growth of diamond, while active hydrogen atoms preferentially etch away non‑diamond phases, thereby improving the crystalline quality of the growing diamond single crystal.
As mentioned above, MPCVD equipment for diamond deposition does not suffer from the contamination issues inherent in HFCVD, where metal filament evaporation and subsequent deposition onto the diamond surface can occur. Nor does it exhibit the thermal‑shock‑induced delamination of diamond from the substrate—common in DC plasma‑jet CVD—caused by the thermal stresses associated with arc ignition and extinction. Moreover, MPCVD systems are far less bulky than high‑pressure, high‑temperature apparatuses. The MPCVD reactor features a resonant cavity without internal electrodes, thereby eliminating electrode‑related contamination; it operates over a broad range of process pressures, generates high‑density, large‑area plasmas with excellent stability, and avoids contact with the chamber walls, thus preventing wall‑induced film contamination. In addition, microwave‑excited plasmas offer advantages such as easy controllability, high plasma density, and the absence of electrode‑related contamination, making MPCVD an exceptionally well‑suited platform for diamond deposition.
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